Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1998-10-22
2000-10-17
Picard, Leo P.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 66, 257347, 257350, 257 72, H01L 21324, H01L 21336
Patent
active
061335835
ABSTRACT:
A film having a high thermal conductivity material such as aluminum nitride is formed on a substrate, and then a silicon film is formed. When a laser light or an intense light corresponding to the laser light is irradiated to the silicon film, since the aluminum nitride film absorbs heat, a portion of the silicon film near the aluminum nitride film is solidified immediately. However, since a solidifying speed is slow in another portion of the silicon film, crystallization progresses from the portion near the aluminum nitride film. When a substrate temperature is 400.degree. C. or higher at laser irradiation, since a solidifying speed is decreased, a crystallinity of the silicon film is increased. Also, when the substrate is thin, the crystallinity of the silicon film is increased.
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Miyanaga Akiharu
Ohtani Hisashi
Takemura Yasuhiko
Yamazaki Shunpei
Costellia Jeffrey L.
Duong Hung Van
Picard Leo P.
Semiconductor Energy Laboratory Co,. Ltd.
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