Switching device and method of preparing it

Details Switching device and method of preparing it Switching device and method of preparing it

1989-03-28

1991-12-24

James, Andrew J.

357 4, 357 8, 357 54, H01L 4902, H01L 2712, H01L 2934

Patent

active

050757385

ABSTRACT:
A switching device comprises a pair of electrodes, an organic insulating layer and an inorganic oxide layer which are held between the electrodes. The organic insulating layer is comprised of an organic compound having at least one .pi.-electron level and the inorganic oxide layer is comprised of a metal oxide. Another switching device comprises a pair of electrodes, an organic insulating thin film provided between the electrodes and said organic insulating thin film in such a manner than an electrification region between the electrodes may be restricted.

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Thin Solid Films, vol. 99, 1983, pp. 277-282, Larkins, G. et al., "Langmuir-Blodgett Films as Barrier Layers in Josephson Tunnel Junctions".
Electronics Letters, vol. 29, 1984, p. 485, Batey, J. et al., "GaP/Phthalocyanine Langmuir-Blodgett Film Electroluminescent Diode".
Electronics Letters, vol. 20, 1984, p. 838, Thomas, N. et al. "GaAs/LB Film Miss Switching Device".

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