Solid state image sensing device

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257444, 257458, 257461, 257463, 257466, H01L 31107, H01L 3100, H01L 31075, H01L 31105

Patent

active

059427884

ABSTRACT:
A solid state image sensing device having a semiconductor substrate, a first diffusion region of a positive or negative conductive type provided on the semiconductor substrate, a plurality of second diffusion regions each of which is an opposite conductive type relative to the first diffusion region and is provided in the first diffusion region, and a semiconductor thin layer provided on at least the second diffusion regions.

REFERENCES:
patent: 5101255 (1992-03-01), Ishioka et al.
patent: 5241575 (1993-08-01), Miyatake et al.
patent: 5365087 (1994-11-01), Sasaki
patent: 5401986 (1995-03-01), Cockrum et al.
patent: 5444274 (1995-08-01), Sasaki
patent: 5481124 (1996-01-01), Kozuka et al.
patent: 5486711 (1996-01-01), Ishida
patent: 5523610 (1996-06-01), Kudo et al.
patent: 5557114 (1996-09-01), Leas et al.
patent: 5581099 (1996-12-01), Kusaka
patent: 5589007 (1996-12-01), Fujioka et al.
patent: 5656835 (1997-08-01), Komobuchi

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Solid state image sensing device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Solid state image sensing device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid state image sensing device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-469192

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.