Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1998-03-20

1999-08-24

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257195, H01L 310328, H01L 310336, H01L 31074, H01L 31109

Patent

active

059427728

ABSTRACT:
A heterojunction epitaxial layer, including a first semiconductor layer containing Al and having a thickness of 50 nm or less and a second semiconductor layer different in composition from the first semiconductor layer, is formed on a substrate composed of semi-insulating GaAs. A gate electrode is formed on a specified region of the top surface of the heterojunction epitaxial layer. The source/drain formation regions of the heterojunction epitaxial layer are provided with respective high-concentration N-type impurity diffusion regions, on which respective ohmic electrodes are formed.

REFERENCES:
patent: 4424525 (1984-01-01), Mimura
patent: 4849368 (1989-07-01), Yamashita et al.
patent: 5026055 (1991-06-01), Ohata
patent: 5223724 (1993-06-01), Green, Jr.
patent: 5493136 (1996-02-01), Matsuzaki et al.
patent: 5751027 (1998-05-01), Sawada et al.

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