Low dielectric constant amorphous fluorinated carbon and method

Details Low dielectric constant amorphous fluorinated carbon and method Low dielectric constant amorphous fluorinated carbon and method

1997-11-19

1999-08-24

Turner, Archene

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

428408, 428195, 428457, H01L 310312

Patent

active

059427698

ABSTRACT:
An amorphous fluorinated carbon film for use as a dielectric insulating layer in electrical devices is formed from a fluorinated cyclic hydrocarbon precursor. The precursor may be selected from the group consisting of hexafluorobenzene, 1,2-diethynyltetrafluorobenzene and 1,4-bis(trifluoromethyl) benzene. The film is deposited by a radiation or beam assisted deposition technique such as an ion beam assisted deposition method, a laser assisted deposition method, or a plasma assisted chemical vapor deposition method. The film is thermally stable in non-oxidizing environment at temperatures up to 400.degree. C. and has a low dielectric constant of less than 3.0. The film can be suitably used as an insulator for spacing apart conductors in an interconnect structure.

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patent: 5256483 (1993-10-01), Yamazaki et al.
patent: 5559367 (1996-09-01), Cohen et al.
patent: 5698901 (1997-12-01), Endo

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