Method of making a MOS field effect transistor in an integrated

Details Method of making a MOS field effect transistor in an integrated Method of making a MOS field effect transistor in an integrated

1985-08-12

1987-04-28

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 29578, 148DIG147, 427 88, H01L 21283

Patent

active

046602763

ABSTRACT:
A method for making a MOS field effect transistor structure having tungsten silicide contact surfaces for the gate and source and drain regions is disclosed. Protective oxide is very precisely positioned so that a tungsten layer is formed on only selected silicon surfaces by selective deposition. Next, a layer of polysilicon is formed on said tungsten layer. The resulting structure is treated in an oxygen atmosphere to form the desired tungsten silicide. A silicon nitride cap can also be used to cover the gate portion during source and drain formation.

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