Surface emitting semiconductor laser

Details Surface emitting semiconductor laser Surface emitting semiconductor laser

1989-07-17

1990-08-14

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 96, 357 4, 357 17, H01S 319

Patent

active

049493507

ABSTRACT:
A vertical-cavity surface emitting laser and method of making in which a III-V heterostructure is epitaxially grown to include a quantum well active region between two interference mirrors separated by an emitting wavelength of the quantum well region. A small pillar of this heterostructure is etched by chemically assisted xenon ion beam itching. Prior to etching, a top metal contact is deposited on the epitaxial semiconductor. Light is emitted through the substrate having a bandgap larger than that of the quantum well region.

REFERENCES:
Iga et al, "Surface Emitting Semiconductor Laser Array: Its Advantage and Future", Journal of Vacuum Science Technology A, 1989, vol. 7, pp. 842-846.
Ogura et al, "Distributed Feed Back Structure Emitting Laser Diode with Multilayered Heterostructure," Japanese Journal of Applied Physics, 1984, vol. 23, pp. L512-L514.
T. Sakaguchi et al, "Vertical Cavity Surface-Emitting Laser with an AlGaAs/AlAs Bragg Reflector," Electronics Letters, 1988, vol. 24, pp. 928-929.
J. L. Jewell et al, "GaAs-AlAs Monolithic Microresonator Arrays," Applied Physics Letters, 1987, vol. 51, pp. 94-96.
J. L. Jewell et al, "Lasing Characteristics of GaAs Microresonators," Applied Physics Letters, 1989, vol. 54, pp. 1400-1402.
P. L. Gourley et al, "High-Efficiency TEM.sub.00 Continuous-Wave (Al,Ga)As Epitaxial Surface-Emitting Lasers and Effect of Half-Wave Periodic Gain," Applied Physics Letters, 1989, vol. 54, pp. 1209-1211.
E. F. Schubert et al, "Delta-Doped Ohmic Contacts to n-GaAs," Applied Physics Letters, 1986, vol. 49, pp. 292-294.
S. W. Pang et al, "Effects of Ion Species and Adsorbed Gas on Dry Etching Induced Damage in GaAs," Journal of Vacuum Science Technology B, 1985, vol. 3, pp. 398-401.
C. K. Peng et al, "Extremely Low Resistance Nonalloyed Ohmic Contacts on GaAs Using InAs/InGaAs and InAs/GaAs Strained-Layer Superlattices," Applied Physics Letters, 1988, vol. 53, pp. 900-901.
S. Kinoshita et al, "Reproducible Fabrication of AlGaAs/GaAs Circular Buried Heterostructure (CBH) Surface-Emitting Lasers with Low Thresholds," Electronics Letters, 1988, vol. 24, pp. 699-700.
A. Scherer et al, "Electrical Damage Induced by Ion Beam Etching of GaAs," Journal of Vacuum Science Technology B, 1988, vol. 6, pp. 277-279.
C. J. Sandroff et al, "Electronic Passivation of GaAs Surfaces Through the Formation of Arsenic--Sulfur Bonds," Applied Physics Letters, 1989, vol. 54, pp. 362-364.
A. Ibaraki et al, "Buried Heterostructure GaAs/GaAlAs Distributed Bragg Reflector Surface Emitting Laser with Very Low Threshold (5.2 mA) under Room Temperature CW Conditions," Japanese Journal of Applied Physics, 1989, vol. 28, pp. L667-L668.

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