Method of manufacturing a dual cylinder-shaped capacitor

Details Method of manufacturing a dual cylinder-shaped capacitor Method of manufacturing a dual cylinder-shaped capacitor

1998-07-31

2000-10-17

Nelms, David

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438253, 438254, 438255, 438396, 438398, H01L 2120

Patent

active

061331104

ABSTRACT:
A method of manufacturing a dual cylinder-shaped capacitor. The method includes the steps of forming a cylindrical oxide layer above a conductive layer, and then forming silicon nitride spacers and first oxide spacers on the sidewalls of the cylindrical oxide layer. Next, using the silicon nitride spacers, the first oxide spacers and the cylindrical oxide layer as a hard mask, the conductive layer is etched to form a separate lower electrode. Thereafter, the oxide layer is removed so that only the silicon nitride spacers remain. Subsequently, second oxide spacers and third oxide spacers are formed on the sidewalls of the silicon nitride spacers. Finally, the silicon nitride spacers are removed, and then the conductive layer is again etched to form the dual cylinder-shaped lower electrode.

REFERENCES:
patent: 5399518 (1995-03-01), Sim et al.

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