Protective, bi-level drive for FET's

Details Protective, bi-level drive for FET's Protective, bi-level drive for FET's

1989-05-05

1990-08-14

DeBoer, Todd E.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Voltage regulator protective circuits

361 42, 361 74, 361 86, 323901, 363 50, H02H 7122

Patent

active

049492110

ABSTRACT:
A bi-level control signal is applied to an FET while the FET's drain-to-source voltage is sensed. The control signal includes a first, relatively low test level followed by a second, relatively higher operating level. The magnitude and duration of the test level are selected to produce a non-destructive current in the FET, even if the load has been shorted. If the value of the sensed drain-to-source voltage is indicative of an abnormal load condition, the FET is turned off. Otherwise, the FET is turned on by the second, relatively higher operating level of the control signal.

REFERENCES:
patent: 4716510 (1987-12-01), Pace et al.
patent: 4754386 (1988-06-01), De Weerd

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