Method for removing an upper layer of material from a semiconduc

Details Method for removing an upper layer of material from a semiconduc Method for removing an upper layer of material from a semiconduc

1996-08-28

1999-08-24

Nguyen, Nam

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

216 38, 216 88, 216 99, 216108, 438692, 438745, 438753, H01L 2100

Patent

active

059424494

ABSTRACT:
A method for removing a portion of an upper layer of one material from an underlying layer of another material to form a uniformly planar surface on a semiconductor wafer. In accordance with one embodiment of the invention, an upper section of the upper layer is etched to an intermediate point in the upper layer. The etching step removes the upper section of the upper layer and leaves only a lower section of the upper layer on the wafer. The lower section of the upper layer is then planarized to a final endpoint. The etching step preferably moves the majority of the upper layer from the wafer so that the remaining portion of the upper layer is thick enough to allow the planarization step to produce a uniformly planar finished surface on the wafer.

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