Thin dielectrics over polysilicon

Details Thin dielectrics over polysilicon Thin dielectrics over polysilicon

1989-03-30

1990-08-14

Carroll, J.

357 236, 357 52, 357 59, H01L 2978, H01L 2702, H01L 2934, H01L 2904

Patent

active

049491547

ABSTRACT:
The present invention teaches a new method for formation of thin dielectrics over polysilicon. This technique permits the fabrication of poly-to-poly capacitors with high specific capacitance (capacitance per unit area). This technique is completely compatible with standard MOS dual poly regrown gate oxide processes. The high value of specific capacitance is achieved by using a composite dielectric which has high dielectric integrity and whose thickness is completely independent of the formation of the regular gate oxide under the second poly. No extra mask steps are required. The composite dielectric is formed as a grown or deposited oxide followed by a deposited nitride which is then reoxidized. Optionally, a second oxide is deposited before reoxidation performed.

REFERENCES:
patent: 4115914 (1978-09-01), Harari
patent: 4270262 (1981-06-01), Hori et al.
patent: 4329706 (1982-05-01), Crowder et al.
patent: 4409723 (1983-10-01), Harari
patent: 4426764 (1984-01-01), Kosa et al.
patent: 4451904 (1984-05-01), Sugiura et al.
patent: 4455568 (1984-06-01), Shiota
patent: 4466172 (1984-08-01), Batra
patent: 4490900 (1985-01-01), Chiu
patent: 4495693 (1985-01-01), Iwahashi et al.
patent: 4577390 (1986-03-01), Hakens
E. Suzuki et al., "A Low-Voltage Alterable EEPROM with Metal-Oxide-Nitride-Oxide-Semiconductor (MONOS) Structures", IEEE Transactions on Electron Devices, vol. ED-30 (Feb. 1983), pp. 122-128.
T. Ito et al., "Low-Voltage Alterable EAROM Cells with Nitride-Barrier Avalanche-Injection MIS (NAMIN)", IEEE Transactions on Electron Devices, vol. ED-26, (Jun. 1979), pp. 906-913.

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