Structured semiconductor body

Details Structured semiconductor body Structured semiconductor body

1986-12-12

1990-08-14

James, Andrew J.

Fishing, trapping, and vermin destroying

357 59, 357 47, 437 79, 437 99, H01L 2972

Patent

active

049491466

ABSTRACT:
A structured semiconductor body e.g., an integrated circuit or a transistor, based on an silicon substrate having barrier regions which contain polycrystalline silicon, preferably produced by a silicon MBE process. The barrier regions are required to delimit monocrystalline silicon semiconductor regions and/or structures to prevent undesirable current flow.

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Y. Ota, "Silicon Molecular Beam Epitaxy", Thin Solid Films, vol. 106, Aug. 1983, pp. 86-112.
H. J. Herzog, et al, "Silicon Layers Grown by Differential Molecular Beam Epitaxy", Journal of the Electrochemical Society, vol. 132, No. 9, 1985, pp. 2227-2231.

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