Breakdown protected planar transistor device

Details Breakdown protected planar transistor device Breakdown protected planar transistor device

1985-12-27

1987-12-29

Pellinen, A. D.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific voltage responsive fault sensor

361 93, 361101, 330207P, H02H 320

Patent

active

047164891

ABSTRACT:
A protection circuit is provided for a planar transistor device. The protection circuit comprises a variable resistor device formed of a junction type field effect transistor. The resistor device is connected in series with the base of the planar transistor. The drain electrode of the J-FET is connected to the base of the planar transistor while the collector of the planar transistor is connected to the gate of the J-FET. Due to this interconnected scheme, base input resistance of the planar transistor is increased to reduce its base current when a high voltage is applied accidentally to the collector. The base current is not eliminated, however, and the device is protected but can still operate.

REFERENCES:
patent: 3336503 (1967-08-01), White
patent: 3601625 (1971-08-01), Radwine et al.
patent: 3970869 (1976-07-01), Coats, Jr.
patent: 3989962 (1976-11-01), Takagi et al.
patent: 3992650 (1976-11-01), Iwasa et al.
patent: 4355341 (1982-10-01), Kaplan
patent: 4400711 (1983-08-01), Avery
patent: 4495536 (1985-01-01), Bynum

Affiliated with

Also associated with

Rating

Breakdown protected planar transistor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Breakdown protected planar transistor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Breakdown protected planar transistor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-466172