Semiconductor integrated circuit device

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Details

357 41, 357 55, H01L 2978, H01L 2702, H01L 2906

Patent

active

049491385

ABSTRACT:
A semiconductor IC device comprising a memory cell wherein a word line is buried in a groove formed in a semiconductor layer, a transfer gate transistor is constructed by the word line and a side area thereof, and on the surface of the semiconductor layer there is formed a capacitor having one electrode being a source or drain region of the transfer gate transistor and a dielectric film contacting with the electrode.

REFERENCES:
patent: 4630088 (1986-12-01), Ogura et al.

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