Patent
1989-05-11
1990-08-14
Hille, Rolf
357 41, 357 55, H01L 2978, H01L 2702, H01L 2906
Patent
active
049491385
ABSTRACT:
A semiconductor IC device comprising a memory cell wherein a word line is buried in a groove formed in a semiconductor layer, a transfer gate transistor is constructed by the word line and a side area thereof, and on the surface of the semiconductor layer there is formed a capacitor having one electrode being a source or drain region of the transfer gate transistor and a dielectric film contacting with the electrode.
REFERENCES:
patent: 4630088 (1986-12-01), Ogura et al.
Hille Rolf
Hiller William E.
Limanek Robert P.
Merrett N. Rhys
Sharp Melvin
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