Color solid-state image sensor

Details Color solid-state image sensor Color solid-state image sensor

1986-05-16

1988-11-08

Sikes, William L.

357 24, 357 31, 357 55, H01L 2714, H01L 2978

Patent

active

047836911

ABSTRACT:
A stacked type color solid-state image sensor in which a photoconductive film is formed evenly on a substrate having a matrix array of picture element cells and wiring pattern including a bonding pad pattern. The photoconductive film functions as an optoelectro-transducing section for the picture element cells. A color filter layer is formed on the photoconductive film such that it is positioned above the cell matrix area. A contact hole for a bonding pad pattern is formed in the photoconductive layer after the color filter layer has been formed. Since the photoconductive film is formed to cover the whole surface area of the substrate, the photoconductive film has an even surface when the color filter layer is formed over the photoconductive film. Thus, the color filter layer has a uniform, homogeneous surface. The degeneration of a color image signal due to an uneven surface of the color filter layer can be prevented by such an ingenious manufacturing design.

REFERENCES:
patent: 4412236 (1983-10-01), Sasano et al.
patent: 4608749 (1986-09-01), Harada et al.
IEEE Transactions on Electronics, vol. ED-30, No. 10, Oct. 1983, pp. 1386-1391; A CCD Imager Overlaid with a Thin-Film Photodetector of a Heterojunction ZnSe-Zn.sub.1-x Cd.sub.x Te; T. Chikamura, et al.

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