Transistor saturation control

Details Transistor saturation control Transistor saturation control

1978-01-30

1980-07-15

Miller, Jr., Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307296R, 307300, 307310, 307315, H03K 326, H03K 1760, H03K 2322

Patent

active

042130689

ABSTRACT:
A circuit for improving the characteristics of a transistor connected in the common emitter amplifier configuration with a load includes an impedance connected across the base-emitter junction. A source of bias coupled to the impedance establishes the conductivity of the transistor. A second transistor of opposite conductivity type to the first and connected as a follower between the collector and base of the first transistor becomes active when the first transistor becomes highly conductive. The emitter follower closes a degenerative feedback loop, reducing the effect of the source of bias in causing increased conductivity of the first transistor.

REFERENCES:
patent: 3435257 (1969-03-01), Lawrie, Jr.
patent: 3534281 (1970-10-01), Hillhouse
patent: 3999086 (1976-12-01), Ekelund
patent: 4107472 (1978-08-01), Kawanami et al.
IBM Tech. Disclre. Bulletin, Nonsaturating Inverting Amplifier, J. B. Atkins, vol. 7, No. 7, 12/64, pp. 596 & 597.
IBM Tech. Disclre. Bulletin, Monolithic Storage Mode Switch, J. Sala, vol. 12, No. 7, 5/70, pp. 2076 & 2077.

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