Spin valve magnetoresistive device

Details Spin valve magnetoresistive device Spin valve magnetoresistive device

1997-07-14

1999-08-24

Kiliman, Leszek

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428692, 428694R, 428694T, 428694TS, 428694TM, 428900, 360113, G11B 566

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active

059423099

ABSTRACT:
A spin valve magnetoresistive multi-layered structure includes a first type magnetic layer which magnetization is free to rotate in accordance with an external applied magnetic field, a non-magnetic spacer layer adjacent to said first type magnetic film, and a second type magnetic layer adjacent to said non-magnetic film so that said second type magnetic layer is separated by said non-magnetic spacer layer from said first type magnetic layer, wherein said second type magnetic layer has a facet single crystal grain structure with a uniform crystal orientation whilst the first type magnetic layer is free of any facet single crystal grain structure with a uniform crystal orientation.

REFERENCES:
patent: 5549978 (1996-08-01), Iwasaki
patent: 5800931 (1998-09-01), Lee
A. Chaiken et al., "Low-field spin-valve magnetoresistance in Fe-Cu-Co sandwiches", pp. 240-242, Appl. Phys. Lett. vol. 59, No. 2, Jul. 8, 1991.
B. Dieny et al., "Giant magnetoresistance in soft ferro-magnetic multilayers", pp. 1297-1299, The American Physical Society, Physical Review B, vol. 43, No. 1, Jan. 1, 1991.
A. Barthelemy et al., "Magnetic and transport properties of Fe/Cr superlattices (invited)", pp. 5908-5913, J. Appl. Phys. vol. 67, No. 9, May 1, 1990.
D.H. Mosca et al., "Oscillatory interlayer coupling and giant magnetoresistance in Co/Cu multilayers", pp. L1-L5, Journal of Magnetism and Magnetic Materials, vol. 94, 1991.
W.F. Egelhoff, Jr. et al., "Magnetoresistance values exceeding 21% in symmetric spin valves", pp. 273-277, American Institute of Physics, J. Appl. Phys. vol. 78, No. 1, Jul. 1, 1995.

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