Magnetron reactor for providing a high density, inductively coup

Details Magnetron reactor for providing a high density, inductively coup Magnetron reactor for providing a high density, inductively coup

1998-09-28

2000-10-17

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429808, 20429823, 20429822, 2042982, C23C 1435, C23C 1434

Patent

active

061325759

ABSTRACT:
A magnetron reactor for providing a high density of plasma is disclosed. The reactor comprises a plasma reactor chamber that is adapted for receiving a processing gas in the chamber and is further adapted for connection to an evacuation source. A direct current driven magnetron is positioned within the reactor chamber and is adapted to hold a sputtering target. A movable substrate supporting pedestal, adapted to hold a substrate, is positioned within the reactor and is movable so as to place the substrate sufficiently proximate to the sputtering target to enable deposition of sputter products thereon. The substrate pedestal is connected to a first radio frequency signal source through an impedence matchbox having a phase shifting adjustment means. To provide a high density inductively coupled plasma, a radio frequency antenna, having a substrate end, is positioned about the chamber. The antenna is connected to a second radio frequency signal source through an impedence matchbox. The reactor of the present invention also includes an electromagnetic coil that is positioned around and adjacent to the substrate end of the radio frequency antenna.

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Aluminum Thin Films and Physical Vapor Deposition in VLSI, Silicon Processing for the VLSI Era, pp. 330-375.

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