Method of manufacturing a distributed feedback type semiconducto

Details Method of manufacturing a distributed feedback type semiconducto Method of manufacturing a distributed feedback type semiconducto

1987-01-13

1987-12-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437129, 372 96, 156652, 156656, 357 17, H01L 21208

Patent

active

047161329

ABSTRACT:
A method of manufacturing a distributed feedback type semiconductor laser comprises a first cladding layer, an active layer disposed on the first cladding layer, a guiding layer disposed on the active layer and a second cladding layer disposed on the guiding layer respectively, in which a grating is disposed on the guiding layer, wherein the method comprises, a step of forming a predetermined material layer on the guiding layer, a step of selectively etching the material layer and the guiding layer until the guiding layer is at least partially exposed thereby forming undulation substantially in a trigonal waveform to the surface of the material layer and the guiding layer, and a step of forming the second cladding layer so as to cover the unevenness. A distributed feedback type semiconductor laser having a grating with an intense coupling the light can be manufactured easily and at a good reproducibility.

REFERENCES:
patent: 4023993 (1977-05-01), Scifres et al.
patent: 4178604 (1979-12-01), Nakamura et al.
patent: 4561915 (1985-12-01), Mito

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