Method of manufacturing semiconductor device having polycrystall

Details Method of manufacturing semiconductor device having polycrystall Method of manufacturing semiconductor device having polycrystall

1984-11-28

1987-12-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437193, 437 41, 437983, H01L 21283

Patent

active

047161310

ABSTRACT:
A metal silicide film is formed on the sides of a polycrystalline silicon layer formed on a semiconductor substrate via an insulating film and the surface of the metal silicide film is covered by a silicon oxide film, whereby the silicon layer has a low electrical resistance and no short-circuiting is necessary. For example, in an insulated gate field effect transistor, the gate electrode is constituted by the polycrystalline silicon layer and the metal silicide film at the side walls of the polycrystalline silicon layer. Such a gate electrode has a low electrical resistance and does not cause undesirable short-circuiting with source and drain regions by the existence of the silicon oxide film formed on the surface of the metal silicide film. Also, other metal silicide film may be formed on the upper surface of the gate electrode. Moreover the silicide-SiO.sub.2 structure may be used on the source and drain regions.

REFERENCES:
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4227944 (1980-10-01), Brown et al.
patent: 4305200 (1981-12-01), Fu et al.
patent: 4389257 (1983-06-01), Geipel, Jr. et al.
patent: 4430292 (1984-02-01), Temple
patent: 4459325 (1984-07-01), Notawa et al.
patent: 4545114 (1985-10-01), Ito et al.
patent: 4593454 (1986-06-01), Baudrant et al.

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