Method of implanting spatially controlled P-N junctions by focus

Details Method of implanting spatially controlled P-N junctions by focus Method of implanting spatially controlled P-N junctions by focus

1986-04-15

1987-12-29

Roy, Upendra

Fishing, trapping, and vermin destroying

2504921, 2504922, 357 91, 427 38, 437 20, 437 22, 437987, 437930, H01L 21265, G01N 2300

Patent

active

047161272

ABSTRACT:
A desired part of a workpiece is irradiated with a focused ion beam which contains at least two species of impurity ions to-be-implanted exhibiting different spacial distributions of ion current densities.
Thus, regions respectively implanted with different species of impurity ions can be formed in a predetermined positional relationship at high precision.

REFERENCES:
patent: 4385946 (1983-05-01), Finegan et al.
patent: 4481042 (1984-11-01), Takigawa et al.
patent: 4533831 (1985-08-01), Itoh et al.
patent: 4556798 (1985-12-01), McKenna et al.
Miyaguchi et al. Jap. Jour. Appl. Phys. 22, (4983), p. L225.
Reuss et al. J. Vac. Sci. Technol. B4 (1986) p. 290.

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