Method of making interconnects between polysilicon layers

Details Method of making interconnects between polysilicon layers Method of making interconnects between polysilicon layers

1988-10-28

1990-08-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437193, 437192, 437 49, 148DIG20, H01L 21283

Patent

active

049487566

ABSTRACT:
Disclosed is a process for making a semiconductor device which has two polycrystalline layers (5) and (15) isolated by insulation films. Openings are made utilizing a single photoresist mask by etching the polycrystalline silicon layer and the underlying insulation film in one sequence. The polycrystalline silicon layers and diffused regions of the substrate exposed in the openings, are connected with a tungsten film (12) by selective deposition.

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