Photoconductive member for exhibiting photoconductivity upon ill

Details Photoconductive member for exhibiting photoconductivity upon ill Photoconductive member for exhibiting photoconductivity upon ill

1986-09-30

1987-12-29

Goodrow, John L.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 84, G03G 514

Patent

active

047160900

ABSTRACT:
A first blocking layer is formed of amorphous silicon carbide (a-Si:C) or amorphous silicon nitride (a-Si:N) on a conductive substrate. The first blocking layer contains 1.times.10.sup.-4 to 1.0 atomic % of a Group III or V element in the Periodic Table. A second blocking layer formed of a-Si:C or a-Si:N on the first blocking layer contains 1.times.10.sup.-8 to 1.times.10.sup.-4 atomic %. The second blocking layer has a thickness of 5 to 40 .mu.m, and a photoconductive layer formed of a-Si is stacked on the second blocking layer to a thickness of 0.5 to 5 .mu.m. With this multilayer structure, a photosensitive member having high charging and potential holding properties can be obtained.

REFERENCES:
patent: 4361638 (1982-11-01), Higashi et al.
patent: 4460669 (1984-07-01), Ogawa et al.
patent: 4510224 (1985-04-01), Yamazaki et al.
patent: 4518670 (1985-05-01), Matsuzaki et al.
patent: 4641168 (1987-02-01), Yamazaki

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