Polysilicon photoconductor for integrated circuits

Details Polysilicon photoconductor for integrated circuits Polysilicon photoconductor for integrated circuits

Filed on

1989-02-23

Date issued

1990-08-14

Examiner

Hearn, Brian E.

Patent Class

Fishing, trapping, and vermin destroying

Other Related Categories

437 8, H01L 3118

Type

Patent

Status

active

Patent number

049487418

Description

ABSTRACT:
A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.

REFERENCES:
patent: 4155785 (1979-05-01), Cuomo et al.
patent: 4370175 (1983-01-01), Levatter
patent: 4412900 (1983-11-01), Tanaka et al.
patent: 4454526 (1984-06-01), Nisitizawa et al.
patent: 4531143 (1985-07-01), Maserjian
patent: 4821091 (1989-04-01), Hammond et al.

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