Process for producing by sloping etching a thin film transistor

Details Process for producing by sloping etching a thin film transistor Process for producing by sloping etching a thin film transistor

1986-11-13

1987-12-29

Powell, William A.

Fishing, trapping, and vermin destroying

156646, 156649, 156651, 156657, 1566591, 1566611, 156662, 357 2, 357 4, 357 237, 357 56, 357 65, 437229, 437966, 430313, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

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047159308

ABSTRACT:
Process for producing by sloping etching a thin film transistor with a self-aligned gate with respect to its drain and source and transistor obtained by this process. The process consists of producing the transistor gate on a glass substrate, depositing an insulating layer on the substrate and gate, depositing a thick hydrogenated amorphous silicon layer on the insulating layer, depositing a positive photosensitive resin layer on the silicon layer, irradiating the resin layer through the substrate, the gate serving as an irradiation mask, developing the resin, chemically etching by successive, partial operations the silicon layer until the insulating layer is exposed, the remaining resin serving both as a mask and being etched following each etching operation of the silicon layer and producing the electrical contacts and source and drain electrodes of the transistor. Application to the production of active matrixes for liquid crystal flat screens.

REFERENCES:
patent: 3878008 (1975-04-01), Gleason et al.
patent: 4514252 (1985-04-01), Roland
IEEE Transactions on Electron Devices, vol. 29, No. 11, Nov. 1982, pp. 1798-1805, Wysocki, Joseph J.

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