Patent
1989-03-31
1990-11-20
Jackson, Jr., Jerome
357 13, 357 55, H01L 2936
Patent
active
049722492
ABSTRACT:
A semiconductor component including a doped semiconductor substrate into which an oppositely doped upper doping region is introduced from an upper surface to form a P-N junction which emerges at the upper surface in an edge region of the substrate. To impove the reverse breakdown voltage capacity below the surface inner section of the P-N juction, an oppositely doped lower doping region is buried in the semiconductor substrate beneath where the P-N juction emerges at the upper surface. The oppositely doped, lower doping region reduces the charge carrier concentration in the critical area. The structure retains the planar surface and is easily producible.
REFERENCES:
patent: 4374389 (1983-02-01), Temple
Proc. 5th Conf. on Solid State Dev., Tokyo 1973 Suppl. Journal Jap. Soc. of App. Phys. vol. 43, 1974 Matsushita pp. 395-399.
IEE Trans of Elec. Dev. vol. ed. 24 No. 8 Aug. 1977 Temple et al., pp. 1077-1081.
Int. Jour. Elect. 1983 vol. 54 No. 1 pp. 127-137 Sundersingh et al. "Concent, . . . Diodes".
J. Phys. D: Appl. Phys. 15(1982) pp. 517-536 Tool "Methods . . . Diodes".
Solid State Tech., Mar. 1980, pp. 98-105, "New Technologies . . . Semiconductor State-of-the-Art", Denning et al.
Temple, IEDm, pp. 423-426, "Junction Termination . . . P-N Junctions".
BBC Brown Boveri AG
Jackson, Jr. Jerome
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