Silicon avalanche photodiode with low multiplication noise

Details Silicon avalanche photodiode with low multiplication noise Silicon avalanche photodiode with low multiplication noise

1989-10-10

1990-11-20

Mintel, William

357 55, 357 52, 357 58, H01L 2714

Patent

active

049722425

ABSTRACT:
There is provided an n.sup.+ -p-.pi.-p.sup.+ APD having a shallow and abrupt p-n junction located about 1 to 2 .mu.m into the APD and having a p-type conductivity region containing acceptors in an uncompensated excess concentration corresponding to a dose of between about 5 and 10.times.10.sup.11 acceptors/cm.sup.2. The combination of the shallow p-n junction and the doping profile in the p-type concentration region gives rise to an electric field profile having multiplication spread substantially throughout the entire thickness of the central active region of the APD and having no drift region. The electric field profile peaks adjacent the p-n junction in a value of about 2.9.times.10.sup.5 volts/cm. The electric field profile diminishes over the distance that the p-type conductivity region extends into the APD but remains at about 1.6.times.10.sup.5 volts/cm to maintain multiplication throughout the thickness of the active region of the APD. The thickness of the APD and the multiplication region extending through the APD can be achieved with an acceptable increase in operating voltage provided that the APD has a thickness less than about 40 .mu.m.

REFERENCES:
patent: 3886579 (1975-05-01), Ohuchi et al.
patent: 4127932 (1978-12-01), Hartman et al.
patent: 4129878 (1978-12-01), Webb
patent: 4383267 (1983-05-01), Webb
patent: 4463368 (1984-07-01), McIntyre et al.
patent: 4654678 (1987-03-01), Lightstone et al.
"Properties of Avalanche Photodiodes" by Webb et al; RCA Review, vol. 35, pp. 234-278, Jun. 1974.
Ruegg, "An Optimized Avalanche Photodiode," IEEE Transactions on Electron Devices, vol. ED-14, No. 5, May 1967, pp. 239-246.
Lucas, "Detectors for Fibre-Optic Communication," Proc. IEE, vol. 123, No. 6, Jun. 1976, pp. 623-626.
Kanedo et al, "Low Noise Avalanche Photodiodes by Channeling of 800-KeV Boron into <110> Silicon," J. Appl. Phys. 49(12), Dec. 1978, pp. 6199-6200.
Melchior et al, "Epitaxial Silicon n.sup.+ -p-.pi.-p.sup.+ Avalanche Photodiodes for Optical Fiber Communications at 800 to 900 Nanometers," Conference: Electron Devices Meeting (Technical Digest), Washington, D.C., U.S.A., (6-8 Dec. 1976), pp. 412-415.

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