Coating apparatus – Gas or vapor deposition – With treating means
Patent
1986-01-16
1987-12-29
Lawrence, Evan K.
Coating apparatus
Gas or vapor deposition
With treating means
118 501, 118725, 156643, 219121LT, H01L 21205, H01L 21263
Patent
active
047153180
ABSTRACT:
An apparatus for photochemically processing a silicon wafer placed in a reactive gas by an illuminating energy for etching or film forming purposes. The apparatus includes a reaction chamber in which the silicon wafer is positioned and the reaction chamber is filled with a gas which is photochemically reactive to the illuminating energy. An opening is formed through the wall of the reaction chamber and the silicon wafer is positioned within the chamber apart from the opening. Condensing means for condensing the light energy from the illuminating energy radiating means at around the opening and directing the same into the chamber is arranged outside the chamber.
REFERENCES:
patent: 4480168 (1984-10-01), Cielo et al.
patent: 4568632 (1986-02-01), Blum et al.
Kameyama Masaomi
Matsumoto Koichi
Lawrence Evan K.
Meller Michael N.
Nippon Kogaku K.K.
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