Method of manufacturing semiconductor device and apparatus there

Chemistry: electrical and wave energy – Processes and products

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C25D 502

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active

049063413

ABSTRACT:
A plating solution is stored in an annular plating solution storage. A plating solution tank having an open upper portion is arranged in a hollow portion of the storage. A mesh-like anode electrode is arranged on the bottom portion of the plating tank. Hold members are attached to an upper side wall of the plating tank. One of the hold members is in contact with a portion to be plated of a semiconductor member and serves as a cathode electrode. The anode and cathode electrodes are connected to a DC power source. The plating solution in the plating solution tank is brought into contact with the portion to be plated and is isolated therefrom by an driving pump intermittently driven at predetermined intervals using an intermittent drive unit. The power source is kept in the ON state while the plating solution is in contact with the portion to be plated, there-by forming a plated layer on the portion to be plated.

REFERENCES:
patent: 4287029 (1981-09-01), Shimamura
Solid State Technology: Mar. "Film Carrier Assembly Process" (1979) pp. 52-55.

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