1981-05-07
1984-01-10
Edlow, Martin H.
357 23, 357 68, H01L 4500, H01L 2978, H01L 2348
Patent
active
044255721
ABSTRACT:
A thin film transistor comprising a substrate having source and drain electrodes formed thereon, a semiconductor layer making contact in part with the source electrode and in part with the drain electrode, a gate electrode, and a gate insulating layer positioned between the semiconductor layer and the gate electrode is disclosed. A portion of the drain electrode is held in overlapping relation to a portion of the gate electrode while a portion of the source electrode is spaced apart from said gate electrode.
REFERENCES:
patent: 3616527 (1971-11-01), Janning
patent: 3710205 (1973-01-01), Swanson
patent: 4172260 (1979-10-01), Okabe et al.
patent: 4332075 (1982-06-01), Ota et al.
Nonomura Keisaku
Takafuji Yutaka
Takechi Sadatoshi
Wada Tomio
Badgett J. L.
Edlow Martin H.
Japan Electronic Industry Development Association
Sharp Kabushiki Kaisha
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