Reference electrode of insulated gate field effect transistor

Details Reference electrode of insulated gate field effect transistor Reference electrode of insulated gate field effect transistor

1978-12-11

1981-05-26

Tung, T.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204195F, G01N 2746

Patent

active

042696828

ABSTRACT:
A reference electrode of an insulated gate field effect transistor having the surface of the gate region thereof coated with a hydrophobic organic polymer membrane. Since this reference electrode is much smaller in size than conventional reference electrodes, an integrated measurement system can easily be constructed by using this reference electrode. This measurement system is especially effective for measuring various ions in the living body.

REFERENCES:
patent: 3591482 (1971-07-01), Neff et al.
patent: 3831432 (1974-08-01), Cox
patent: 3856649 (1974-12-01), Genshaw et al.
patent: 4020830 (1977-05-01), Johnson et al.
patent: 4133735 (1979-01-01), Afromowitz et al.
Matsuo et al., "IEEE, Trans. on BME", vol. BMZ-21, No. 6, pp. 485-487, (1974).
Japanese Published Unexamined Patent Application No. 52-26292, (Feb. 1977).
Comte et al., "Reference ISFET For Compensation", Proc. of the 30th Annual Conf. on Engr. in Medicine and Biology, p. 298, Nov. 5-9, 1977.
Matsuo et al., "Characteristics of Parylene Gate ISFET", Extended Abstracts of Corrosion, Division of the Electro-Chemical Society, Inc. Abstract No. 83, Spring Meeting, Seattle, Washington, May 21-22, 1978.

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