Semiconductor laser with a two-striped channel

Details Semiconductor laser with a two-striped channel Semiconductor laser with a two-striped channel

1985-04-15

1987-06-30

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 48, H01S 319

Patent

active

046776338

ABSTRACT:
A semiconductor laser comprising a substrate having a two step-striped channel; and a double heterostructure-laser-operating area having successively a cladding layer, an active layer and a second cladding layer on the substrate. The two step-striped channels are composed of a first channel and a second channel having a width which is narrower than the width of the first channel and having a depth which is deeper than the depth of the first channel. The second channel is positioned in the center portion of the first channel, thereby allowing current injected into the active layer to flow into the center portion of the two step-striped channel.

REFERENCES:
patent: 4545057 (1985-10-01), Hayakawa et al.
H. Yonezu, et al., Applied Physics Letters, pp. 637-639, May 15th, 1979.
TGED, 81-42, 31 (Jul. 1981), IECE Japan.

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