1985-03-08
1987-06-30
Davie, James W.
357 22, 357 41, 357 45, H01L 2714, H01L 3100
Patent
active
046774530
ABSTRACT:
In a solid state image sensor including a plurality of light receiving elements in a matrix manner, each light receiving element is composed of a static induction transistor having a MOS gate construction formed on a surface of a semiconductor substrate and having a potential barrier formed in a vertical direction perpendicular to the semiconductor substrate surface. Therefore, a self-alignment process can be preferably applied to a formation of the solid state image sensor, so that the light receiving elements can be integrated in an easy and simple manner.
REFERENCES:
patent: 4364167 (1982-12-01), Donley
patent: 4377817 (1983-03-01), Nishizawa et al.
Matsumoto Kazuya
Nakamura Tsutomu
Davie James W.
Epps Georgia Y.
Olympus Optical Co,. Ltd.
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