Power field-effect transistor structures

Details Power field-effect transistor structures Power field-effect transistor structures

1985-08-16

1987-06-30

Carroll, J.

357 238, 357 41, 357 45, 357 55, 357 65, H01L 2978, H01L 2702, H01L 2710, H01L 2906

Patent

active

046774521

ABSTRACT:
A power field-effect transistor device includes a source electrode metallization layer having windows to reduce interlayer capacitance and shorting between the source electrode and gate electrode layers. An alternative embodiment has source bus expanded areas for accommodating the source electrode layer contacts, which are orthogonally placed to facilitate the construction of the device.

REFERENCES:
patent: 3783349 (1974-01-01), Beasome
patent: 4055884 (1977-11-01), Jambotkar
patent: 4148047 (1979-04-01), Hendrickson
patent: 4152714 (1979-05-01), Hendrickson et al.
patent: 4355320 (1982-10-01), Tihangi
patent: 4376286 (1983-03-01), Lidow et al.
patent: 4412242 (1983-10-01), Herman et al.
J. Fagenbaum, "Advances in Extending Performance of Power MOS Field-effect Transistors Promise to Extend Their Usefulness . . . ", vol. 18, No. 1, Jan. 1981, pp. 64-65, IEEE Spectrum.

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