Method for suppressing ionization avalanches in a helium wafer c

Details Method for suppressing ionization avalanches in a helium wafer c Method for suppressing ionization avalanches in a helium wafer c

1989-05-23

1991-03-12

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437248, 148DIG31, 156643, 156345, 156646, H01L 21302

Patent

active

049993208

ABSTRACT:
A method for suppressing ionization avalanches in a single wafer dry etch reactor is provided. An electron scavenging agent is mixed with helium gas in a container (32). The mixture of helium and the agent is introduced through an inlet (34) to a chamber (30) formed between a wafer (24), an O-ring (26) and a powered cathode (16). As free electrons are accelerated through a potential drop in the inlet and outlet (34 and 40), the electron scavenging agent combines with electrons to form anions. Partially due to the fact that anions are too massive to reach the energy level required to ionize helium, ionization avalanches of helium are suppressed and, thus, there is no arcing in the inlet and outlet (34 and 40).

REFERENCES:
patent: 4260884 (1981-04-01), Lovelock
patent: 4385937 (1983-05-01), Ohmura
patent: 4444618 (1984-04-01), Saia et al.
patent: 4450568 (1984-05-01), Asmus
patent: 4468284 (1984-08-01), Nelson
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4687543 (1987-08-01), Bowker
"Single Wafer Triode Etcher", Solid State Technol., Mar. 1984, pp. 57-58.

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