Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound
Patent
1982-03-31
1987-06-30
Dixon, Jr., William R.
Chemistry of inorganic compounds
Silicon or compound thereof
Binary compound
423342, 423349, 423350, C01B 3304
Patent
active
046769676
ABSTRACT:
Silicon tetrachloride, hydrogen and metallurgical silicon are reacted at about 400.degree.-600.degree. C. and at pressures in excess of 100 psi, and specifically from about 300 up to about 600 psi to form di- and trichlorosilane that is subjected to disproportionation in the presence of an anion exchange resin to form high purity silane. By-product and unreacted materials are recycled, with metallurgical silicon and hydrogen being essentially the only consumed feed materials. The silane product may be further purified, as by means of activated carbon or cryogenic distillation, and decomposed in a fluid bed or free space reactor to form high purity polycrystalline silicon and by-product hydrogen which can be recycled for further use. The process results in simplified waste disposal operations and enhances the overall conversion of metallurgical grade silicon to silane and high purity silicon for solar cell and semiconductor silicon applications.
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Capella Steven
Dixon Jr. William R.
Reinisch Morris N.
Union Carbide Corporation
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