Semiconductor laser device having integral optical output modula

Details Semiconductor laser device having integral optical output modula Semiconductor laser device having integral optical output modula

1986-04-25

1988-03-22

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 357 41, 372 46, H01S 319

Patent

active

047333995

ABSTRACT:
A semiconductor laser device comprises a semiconductor laser portion (17) including a double hetero structure and a vertical MIS-FET portion (18) form on, and in series with, the semiconductor laser portion (17). The vertical MIS-FET portion (18) includes an n-type GaAs layer (6), a p-type GaAs layer (7), an n-type GaAs layer (8), and a striped groove (31) having V-shaped cross-section formed from the top surface of the n-type GaAs layer (8) to the n-type GaAs layer (6). A metal gate electrode (11) is further provided on the top surface of the striped groove (31), on an insulating film (10). A current (41)flowing through the vertical MIS-FET portion (18) is changed according to a photo modulating signal applied to the metal gate electrode (11) and, a current (40) is also changed according to the current (41). Accordingly, a laser oscillation output of the semiconductor laser portion (17) is also changed to accomplish the optical output modulation of the semiconductor laser.

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C. Cohen, Optoelectronic Chip Integrates Lasers and Pair of FETs, Electronics, No. 13, (Jun. 30, 1983): 89-90.
U. Koren et al., Recent Developments in Monolithic Integration of InGaAsP/InP Optoelectronic Devices, IEEE Journal of Quantum Electronics, vol. QE-18, No. 10, (Oct. 1982): 1653-1661.
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