Plasma CVD apparatus

Details Plasma CVD apparatus Plasma CVD apparatus

1989-08-23

1991-03-12

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

427 39, C23C 1650

Patent

active

049989685

ABSTRACT:
A plasma CVD apparatus for forming a deposition film on a base by causing a discharge in a space between the base and an electrode has an auxiliary member removably arranged in electrical contact to the electrode on a face of the electrode which contributes to the discharge. The auxiliary member thus acts as the electrode.

REFERENCES:
patent: 4223048 (1980-09-01), Engle
patent: 4379943 (1983-04-01), Yang
patent: 4452686 (1984-06-01), Axenov et al.
patent: 4452828 (1984-06-01), Namba et al.
patent: 4462333 (1984-07-01), Nath
patent: 4576830 (1986-03-01), Kiss
patent: 4616597 (1986-10-01), Kaganowicz
Maissel et al., Handbook of Thin Film Technology, .COPYRGT.1970, McGraw-Hill, N.Y. pp. 4-32 to 4-35.
Vossen et al., Thin Film Processes, Academic Press, N.Y. .COPYRGT.1978, pp. 27-28.

Affiliated with

Also associated with

Rating

Plasma CVD apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma CVD apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma CVD apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-446138