Semiconductor device with composite electrode

Details Semiconductor device with composite electrode Semiconductor device with composite electrode

1988-01-21

1990-09-04

Hille, Rolf

357 42, 357 65, 357 68, 357 71, 357 59, H01L 2348

Patent

active

049548719

ABSTRACT:
Provided is a semiconductor device having a single continuous wiring layer in which a predetermined portion thereof is made of a semiconductor material, and the remaining portion thereof is made of a metal compound of the semiconductor material. The predetermined portion of the wiring layer preferably constitutes the gate electrode of a field effect transistor.

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