Patent
1988-12-13
1990-09-04
Hille, Rolf
357 15, 357 29, 357 32, 357 58, H01L 2714
Patent
active
049548646
ABSTRACT:
A semiconductor diode structure useful for harmonic generation of millimeter or submillimeter wave radiation from a fundamental input wave is fabricated on a GaAs substrate. A heavily doped layer of n.sup.++ GaAs is produced on the substrate and then a layer of intrinsic GaAs on said heavily doped layer on top of which a sheet of heavy doping (++) is produced. A thin layer of intrinsic GaAs grown over the sheet is capped with two metal contacts separated by a gap to produce two diodes connected back to back through the n.sup.++ layer for multiplication of frequency by an odd multiple. If only one metal contact caps the thin llayer of intrinsic GaAs, the second diode contact is produced off the diode structure and connected to the n.sup.++ layer for multiplication of frequency by an odd multiple. If only one metal contact caps the thin layer of intrinsic GaAs, the second diode contact is produced to connect to the n.sup.++ layer for multiplication of frequency by an even number. The odd or even frequency multiple is selected by a filter. A phased array of diodes in a grid will increase the power of the higher frequency generated.
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Glenn Charles E. B.
Hille Rolf
Jones Thomas H.
Manning John R.
The United States of America as represented by the Administrator
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