Schottky barrier on indium gallium arsenide

Details Schottky barrier on indium gallium arsenide Schottky barrier on indium gallium arsenide

1988-05-26

1990-09-04

James, Andrew J.

357 16, 357 22, 357 67, H01L 2948

Patent

active

049548514

ABSTRACT:
The formation on an indium gallium arsenide substrate of a cadmium-containing layer significantly enhances the Schottky-barrier height between an overlying metal and the substrate. Device structures such as gates for indium gallium arsenide field-effect transistors are thereby made feasible.

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