Variable-capacitance diode device

Details Variable-capacitance diode device Variable-capacitance diode device

1988-08-12

1990-09-04

Larkins, William D.

357 89, 357 90, H01L 2993

Patent

active

049548506

ABSTRACT:
In a variable-capacitance diode device consisting of a PN junction, and a semiconductor layer of a first conductivity type, the impurity concentration of which decreases as the depth from the PN junction increases, the semiconductor layer of the first conductivity type is arranged to include, except in the vicinity of the PN junction, at least one such point that the following relationship holds true:

REFERENCES:
patent: 3483443 (1969-12-01), Mayer
patent: 3634738 (1972-01-01), Leith et al.
patent: 4438445 (1984-03-01), Colguhoun et al.

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