Method for forming electrode on semiconductor

Details Method for forming electrode on semiconductor Method for forming electrode on semiconductor

1996-03-14

1997-03-11

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437176, 437179, 437 39, 148DIG139, 148DIG140, H01L 2144

Patent

active

056100973

ABSTRACT:
A method for forming electrodes on a semiconductor includes introducing at least one reactive oxidizing gas selected from the group consisting of ozone, atomic oxygen, nitrogen dioxide, oxygen ion and oxygen plasma to an oxide semiconductor surface and depositing electrode material on the oxide semiconductor surface without exposing the surface to the outside atmosphere.

REFERENCES:
patent: 5006483 (1991-04-01), Ohtsuka et al.
patent: 5221638 (1993-06-01), Ohtsuka et al.

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