Method of making an AlPSb/InP single heterojunction bipolar tran

Details Method of making an AlPSb/InP single heterojunction bipolar tran Method of making an AlPSb/InP single heterojunction bipolar tran

1995-06-06

1997-03-11

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437126, 437133, 148DIG72, H01L 21265

Patent

active

056100868

ABSTRACT:
An epitaxial structure and method of manufacture for a single heterojunction bipolar transistor capable of being utilized in high-speed and high-power applications. Preferably, the epitaxial structure comprises an N-type collector made from InP, a P-type base made from InP, and an N-type emitter made from a semiconductor material of approximately 39 mole percent AlP and approximately 61 mole percent Sb.

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Chris G. Van de Walle, "Band Lineups and Defomration Potentials in the Model-Solid Theory", Am. Phys. Soc., Phys. Rev. B., vol. 39, No. 3, pp. 1871-1883, Jan. 1989.

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