Method of making a vertical FET using epitaxial overgrowth

Details Method of making a vertical FET using epitaxial overgrowth Method of making a vertical FET using epitaxial overgrowth

1995-06-07

1997-03-11

Thomas, Tom

Fishing, trapping, and vermin destroying

437 40, 437 41, H01L 21265

Patent

active

056100850

ABSTRACT:
A vertical field effect transistor (1700) and fabrication method with buried gates (1704) having spaced apart gate fingers and connecting structure and overgrown with source and channel epilayer followed by a doping connection of the gate fingers and connecting structure is disclosed. The vertical field effect transistor elements (1702, 1704, 1706, 1708, 1720, 1724) are made of III-V semiconductor compound grown on a germanium substrate (1726).

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