Method of making back gate contact for silicon on insulator tech

Details Method of making back gate contact for silicon on insulator tech Method of making back gate contact for silicon on insulator tech

1996-05-20

1997-03-11

Niebling, John

Fishing, trapping, and vermin destroying

437 60, 437918, 437 41, H01L 2184

Patent

active

056100833

ABSTRACT:
A process for creating a back gate contact, in an SOI layer, that can easily be incorporated into a MOSFET fabrication recipe, has been developed. The back gate contact consists of a etched trench, lined with insulator, and filled with doped polysilicon. The polysilicon filled trench electrically connects the semiconductor substrate to overlying metal contacts.

REFERENCES:
patent: 5185280 (1993-02-01), Houston et al.
patent: 5241211 (1993-08-01), Tashiro
patent: 5294821 (1994-03-01), Iwamatsu
patent: 5414288 (1995-05-01), Fitch et al.
patent: 5573961 (1996-11-01), Hsu et al.

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