Method for fabricating thin film transistor using back light exp

Details Method for fabricating thin film transistor using back light exp Method for fabricating thin film transistor using back light exp

1993-12-28

1997-03-11

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 40, 437 42, 437978, 148DIG43, 430319, H01L 2184

Patent

active

056100825

ABSTRACT:
A method for fabricating a thin film transistor, enabling an easy fabrication and an improvement in device characteristic by use of a self-alignment. The method including the steps of forming a gate electrode on an insulating transparent substrate, depositing a plurality of gate insulating films having different refractive indexes, in the order of higher refractive index, and then a semiconductor layer, an etch stopper layer and a photoresist film, in this order, subjecting the resulting structure to a back light exposure using the gate electrode as a mask and then to a development for patterning the photoresist film so that the gate electrode can be overlapped by a predetermined overlap length with each of a source electrode and a drain electrode to be formed at a subsequent step, selectively etching the etch stopper layer using the patterned photoresist film as a mask, removing the patterned photoresist film and then sequentially depositing a high concentration n type doped semiconductor layer and a metal layer over the entire exposed surface of the resulting structure, and selectively removing respective portions of the high concentration n type doped semiconductor layer and the metal layer disposed over the patterned etch stopper layer to form the source electrode and the drain electrode.

REFERENCES:
patent: 4778773 (1988-10-01), Sukegawa et al.
patent: 4943837 (1990-07-01), Konishi et al.
patent: 4960719 (1990-10-01), Tanaka et al.
patent: 5028551 (1991-07-01), Dohjo et al.
patent: 5041888 (1991-08-01), Possin et al.
patent: 5045753 (1991-09-01), Katayama et al.
patent: 5071779 (1991-12-01), Tanaka et al.
patent: 5091337 (1992-02-01), Watanabe et al.
patent: 5137841 (1992-08-01), Takeda et al.
patent: 5243202 (1993-09-01), Mori et al.
patent: 5248630 (1993-09-01), Serikawa et al.
patent: 5254488 (1993-10-01), Haller
patent: 5306653 (1994-04-01), Hur
patent: 5326712 (1994-07-01), Bae
patent: 5371025 (1994-12-01), Sung
patent: 5374570 (1994-12-01), Nasu et al.
S. Wolf & R. N. Tauber "Silicon Proc. For the VLSI Era" vol. I, p. 308, 1986.
S. Wolf & R. N. Tauber, "Silicon Proc. For the VLSI Era", vol. I, 1986, pp. 531-533, 550-553, 556-557, 546, 581.

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