Semiconductor laser with an interposed gap

Details Semiconductor laser with an interposed gap Semiconductor laser with an interposed gap

1987-12-09

1989-07-11

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 48, H01S 319

Patent

active

048478458

ABSTRACT:
A semiconductor laser includes a semiconductor substrate on which a first semiconductor layer forming a rectifying junction is disposed, a groove extending through the first layer and into the substrate, a first cladding layer disposed on the semiconductor substrate in the groove, an active layer provided on the first cladding layer in the groove, and a second cladding layer provided directly on the active layer and opposite the first semiconductor layer, with an interposed gap void of solid material or an interposed gap and a current blocking material having only negligible parasitic capacitance disposed at spaced locations in the gap.

REFERENCES:
patent: 3833435 (1974-09-01), Logan et al.
patent: 3865646 (1975-02-01), Logan et al.
patent: 3883219 (1975-05-01), Logan et al.
"Design and Implementation of High-Speed InGaAsP Constricted-Mesa Lasers", Conference on Optical Fiber Communication, Technical Digest, 24-26, Feb., 1986.
IEEE Journal of Light-wave Technology, Sakakibara et al., vol. LT-3, No. 5, Oct. 1985, pp. 978-984.

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