Removing metal precipitates from semiconductor devices

Details Removing metal precipitates from semiconductor devices Removing metal precipitates from semiconductor devices

1986-10-15

1988-03-22

Roy, Upendra

Fishing, trapping, and vermin destroying

357 64, 420490, 437 31, 437154, 437939, 437942, H01L 21225, H01L 21265

Patent

active

047328746

ABSTRACT:
Rapid thermal annealing, involving rapid heating to a temperature of between 550 degrees C. and 750 degree C. for between 30 and 90 seconds and rapid cooling, is used to dissolve the precipitates of transition metals which tend to occur in a silicon wafer and to keep such metals in solution after cooling. Such annealing can be used in the manufacture of bipolar transistors to limit the emitter-collector shorting caused by metallic precipitates. It is also useful more generally to improve the leakage current of p-n junctions either in diodes or as parts of bipolar or field-effect transistors.

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