Method of forming alignment marks in sapphire

Details Method of forming alignment marks in sapphire Method of forming alignment marks in sapphire

1986-11-03

1988-03-22

Roy, Upendra

Fishing, trapping, and vermin destroying

148DIG83, 437 20, 437 24, 437247, H01L 1700, H04L 21265

Patent

active

047328673

ABSTRACT:
Indicia are formed in a sapphire substrate by ion implantation with a sufficient amount of silicon ions to establish a contrast with the remainder of the substrate. The implant is annealed at 1050.degree. to 1200.degree. C. under an oxygen or inert atmosphere. The implants are stable to repeated heatings to elevated temperature. The implants are further beneficial in that they do not introduce a source of contamination into the substrate.

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